Technolgy file archetecture revised with dictionary input method
This commit is contained in:
@@ -0,0 +1,585 @@
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schema_version: 1.0.0
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foundry: consemi
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technology: PSIN_SOI
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source:
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source_file: Wuyue_SP90_technology_handbook_V0.9.pdf
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source_chapter: Chapter 3.2 Drawn Layer
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source_pages:
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- 11
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- 12
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notes:
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- Layer data was extracted from Table 3-2 of the Wuyue SP90 Technology Handbook V0.9.
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constants: {}
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layers:
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WGS_COR:
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layer:
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- 11
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- 1
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description: SOI waveguide shallow etch core
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category: drawn
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source_table: Table 3-2
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WGS_CLD:
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layer:
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- 11
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- 2
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description: SOI waveguide shallow etch cladding
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category: drawn
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source_table: Table 3-2
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WGS_TRE:
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layer:
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- 11
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- 3
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description: SOI waveguide shallow etch trench
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category: drawn
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source_table: Table 3-2
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WGS_PINREC:
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layer:
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- 11
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- 13
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description: SOI waveguide shallow etch pin recognition
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category: drawn
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source_table: Table 3-2
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WGM_COR:
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layer:
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- 12
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- 1
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description: SOI waveguide medium etch core
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category: drawn
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source_table: Table 3-2
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WGM_CLD:
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layer:
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- 12
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- 2
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description: SOI waveguide medium etch cladding
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category: drawn
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source_table: Table 3-2
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WGM_TRE:
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layer:
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- 12
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- 3
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description: SOI waveguide medium etch trench
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category: drawn
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source_table: Table 3-2
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WGM_PINREC:
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layer:
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- 12
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- 13
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description: SOI waveguide medium etch pin recognition
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category: drawn
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source_table: Table 3-2
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WGF_COR:
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layer:
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- 13
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- 1
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description: SOI waveguide full etch core
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category: drawn
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source_table: Table 3-2
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WGF_CLD:
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layer:
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- 13
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- 2
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description: SOI waveguide full etch cladding
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category: drawn
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source_table: Table 3-2
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WGF_DUMB:
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layer:
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- 13
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- 11
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description: SOI waveguide full etch dummy block
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category: drawn
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source_table: Table 3-2
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WGF_PINREC:
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layer:
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- 13
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- 13
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description: SOI waveguide full etch pin recognition
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category: drawn
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source_table: Table 3-2
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NMOD_DRW:
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layer:
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- 33
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- 9
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description: N IMP for medium doped area, such as PD
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category: drawn
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source_table: Table 3-2
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PMOD_DRW:
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layer:
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- 34
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- 9
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description: P IMP for medium doped area, such as PD
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category: drawn
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source_table: Table 3-2
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NDD_DRW:
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layer:
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- 35
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- 9
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description: N IMP for lightly doped area, such as modulator
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category: drawn
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source_table: Table 3-2
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PDD_DRW:
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layer:
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- 36
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- 9
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description: P IMP for lightly doped area, such as modulator
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category: drawn
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source_table: Table 3-2
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NCT_DRW:
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layer:
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- 37
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- 9
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description: N+ IMP for heavily doped area, such as contact via
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category: drawn
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source_table: Table 3-2
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PCT_DRW:
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layer:
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- 38
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- 9
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description: P+ IMP for heavily doped area, such as contact via
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category: drawn
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source_table: Table 3-2
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SNS_COR:
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layer:
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- 21
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- 1
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description: SiN waveguide shallow etch core
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category: drawn
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source_table: Table 3-2
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SNS_CLD:
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layer:
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- 21
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- 2
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description: SiN waveguide shallow etch cladding
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category: drawn
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source_table: Table 3-2
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SNS_TRE:
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layer:
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- 21
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- 3
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description: SiN waveguide shallow etch trench
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category: drawn
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source_table: Table 3-2
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SNS_PINREC:
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layer:
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- 21
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- 13
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description: SiN waveguide shallow etch pin recognition
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category: drawn
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source_table: Table 3-2
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SNF_COR:
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layer:
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- 22
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- 1
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description: SiN waveguide full etch core
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category: drawn
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source_table: Table 3-2
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SNF_CLD:
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layer:
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- 22
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- 2
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description: SiN waveguide full etch cladding
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category: drawn
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source_table: Table 3-2
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SNF_DUMB:
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layer:
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- 22
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- 11
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description: SiN waveguide full etch dummy block
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category: drawn
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source_table: Table 3-2
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SNF_PINREC:
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layer:
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- 22
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- 13
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description: SiN waveguide full etch pin recognition
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category: drawn
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source_table: Table 3-2
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GE_DRW:
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layer:
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- 50
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- 9
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description: Ge trench
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category: drawn
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source_table: Table 3-2
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GE_DUMB:
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layer:
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- 50
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- 11
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description: Ge trench dummy block
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category: drawn
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source_table: Table 3-2
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SAB_REV:
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layer:
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- 51
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- 8
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description: Salicide area for contact via
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category: drawn
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source_table: Table 3-2
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CT_DRW:
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layer:
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- 60
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- 9
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description: Contact via
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category: drawn
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source_table: Table 3-2
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M1_DRW:
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layer:
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- 71
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- 9
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description: Metal 1
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category: drawn
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source_table: Table 3-2
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M1_SLOT:
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layer:
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- 71
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- 5
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description: Metal 1 slot
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category: drawn
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source_table: Table 3-2
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M1_DUMB:
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layer:
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- 71
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- 11
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description: Metal 1 dummy block
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category: drawn
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source_table: Table 3-2
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M1_PINREC:
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layer:
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- 71
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- 13
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description: Metal 1 pin recognition
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category: drawn
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source_table: Table 3-2
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MTH_DRW:
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layer:
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- 80
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- 9
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description: TiN Heater
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category: drawn
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source_table: Table 3-2
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EC1_DRW:
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layer:
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- 90
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- 9
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description: Nitride for edge coupler between M1 and M2
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category: drawn
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source_table: Table 3-2
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V1_DRW:
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layer:
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- 61
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- 9
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description: Via 1
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category: drawn
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source_table: Table 3-2
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M2_DRW:
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layer:
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- 72
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- 9
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description: Metal 2
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category: drawn
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source_table: Table 3-2
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M2_SLOT:
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layer:
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- 72
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- 5
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description: Metal 2 slot
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category: drawn
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source_table: Table 3-2
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M2_DUMB:
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layer:
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- 72
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- 11
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description: Metal 2 dummy block
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category: drawn
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source_table: Table 3-2
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M2_PINREC:
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layer:
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- 72
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- 13
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description: Metal 2 pin recognition
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category: drawn
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source_table: Table 3-2
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EC2_DRW:
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layer:
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- 91
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- 9
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description: Nitride for edge coupler between M2 and M3
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category: drawn
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source_table: Table 3-2
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V2_DRW:
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layer:
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- 62
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- 9
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description: Via 2
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category: drawn
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source_table: Table 3-2
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M3_DRW:
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layer:
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- 73
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- 9
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description: Metal 3
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category: drawn
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source_table: Table 3-2
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M3_SLOT:
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layer:
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- 73
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- 5
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description: Metal 3 slot
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category: drawn
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source_table: Table 3-2
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M3_DUMB:
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layer:
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- 73
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- 11
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description: Metal 3 dummy block
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category: drawn
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source_table: Table 3-2
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M3_PINREC:
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layer:
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- 73
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- 13
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description: Metal 3 pin recognition
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category: drawn
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source_table: Table 3-2
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EC3_DRW:
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layer:
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- 92
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- 9
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description: Nitride for edge coupler between M3 and TM
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category: drawn
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source_table: Table 3-2
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TV_DRW:
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layer:
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- 63
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- 9
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description: Top Via
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category: drawn
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source_table: Table 3-2
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TM_DRW:
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layer:
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- 74
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- 9
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description: Top metal
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category: drawn
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source_table: Table 3-2
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TM_SLOT:
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layer:
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- 74
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- 5
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description: Top metal slot
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category: drawn
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source_table: Table 3-2
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TM_DUMB:
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layer:
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- 74
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- 11
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description: Top metal dummy block
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category: drawn
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source_table: Table 3-2
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TM_PINREC:
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layer:
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- 74
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- 13
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description: Top metal pin recognition
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category: drawn
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source_table: Table 3-2
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PA_DRW:
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layer:
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- 100
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- 9
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description: Metal pad open for testing and packaging
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category: drawn
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source_table: Table 3-2
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DO1_DRW:
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layer:
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- 101
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- 9
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description: SiN open for optical coupling
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category: drawn
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source_table: Table 3-2
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DT_DRW:
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layer:
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- 110
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- 9
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description: Deep Si Trench for edge coupler
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category: drawn
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source_table: Table 3-2
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LOGO_DRW:
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layer:
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- 226
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- 9
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description: Logo, all logos print on wafer must only use this layer
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category: drawn
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source_table: Table 3-2
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METAL_DUMB:
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layer:
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- 227
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- 11
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description: Metal dummy block
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category: drawn
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source_table: Table 3-2
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ALL_DUMB:
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layer:
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- 228
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- 11
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description: all layer dummy block
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category: drawn
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source_table: Table 3-2
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REC_TXT:
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layer:
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- 229
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- 12
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description: Text layer, not print on wafer, use for description such as polarization
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and optical band description
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category: drawn
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source_table: Table 3-2
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REC_MARK:
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layer:
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- 229
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- 15
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description: Mark layer, not print on wafer
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category: drawn
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source_table: Table 3-2
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OIOGC_PORT:
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layer:
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- 230
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- 14
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description: GC optical port, for wafer-level testing recognition
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category: drawn
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source_table: Table 3-2
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OIOGC_TXT:
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layer:
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- 230
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- 12
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description: GC optical port recognition text, not print on wafer
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category: drawn
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source_table: Table 3-2
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OIOEC_PORT:
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layer:
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- 231
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- 14
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description: EC optical port, for wafer-level testing recognition
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category: drawn
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source_table: Table 3-2
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OIOEC_TXT:
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layer:
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- 231
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- 12
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description: EC optical port recognition text, not print on wafer
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category: drawn
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source_table: Table 3-2
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EIORF_PORT:
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layer:
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- 232
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- 14
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description: RF electrical port, for wafer-level testing recognition
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category: drawn
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source_table: Table 3-2
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EIORF_TXT:
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layer:
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- 232
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- 12
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description: RF electrical port recognition text, not print on wafer
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category: drawn
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source_table: Table 3-2
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EIODC_PORT:
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layer:
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- 233
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- 14
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description: DC electrical port, for wafer-level testing recognition
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category: drawn
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source_table: Table 3-2
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EIODC_TXT:
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layer:
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- 233
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- 12
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description: DC electrical port recognition text, not print on wafer
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category: drawn
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source_table: Table 3-2
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OPTSI_TXT:
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layer:
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- 240
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- 12
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description: Pin rectangle text, for Si routing pin recognition
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category: drawn
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source_table: Table 3-2
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OPTSIN_TXT:
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layer:
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- 241
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- 12
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description: Pin rectangle text, for SiN routing pin recognition
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category: drawn
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source_table: Table 3-2
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EPTM_TXT:
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layer:
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- 246
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- 12
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description: Pin rectangle text, for all metal layer routing pin recognition
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category: drawn
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source_table: Table 3-2
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DEV_AREA:
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layer:
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- 251
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- 16
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description: Device drawn area marking layer, indicates the boundary
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category: drawn
|
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source_table: Table 3-2
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BB_AREA:
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layer:
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- 260
|
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- 16
|
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description: Blackbox area
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category: drawn
|
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source_table: Table 3-2
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BB_TXT:
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layer:
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- 260
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- 12
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description: Blackbox label text, not print on wafer
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category: drawn
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source_table: Table 3-2
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EC_AREA:
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layer:
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- 261
|
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- 16
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description: Device area marking layer for non-Blackbox EC. All the EC1/2/3 layer
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must be covered by the EC_AREA layer.
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category: drawn
|
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source_table: Table 3-2
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BBSI_AREA:
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layer:
|
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- 265
|
||||
- 16
|
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description: Blackbox area marking layer for Si device
|
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category: drawn
|
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source_table: Table 3-2
|
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BBSIN_AREA:
|
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layer:
|
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- 266
|
||||
- 16
|
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description: Blackbox area marking layer for SiN device
|
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category: drawn
|
||||
source_table: Table 3-2
|
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BBEC_AREA:
|
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layer:
|
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- 267
|
||||
- 16
|
||||
description: Blackbox area marking layer for EC device
|
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category: drawn
|
||||
source_table: Table 3-2
|
||||
BBACT_AREA:
|
||||
layer:
|
||||
- 268
|
||||
- 16
|
||||
description: Blackbox area marking layer for GC device and active device using
|
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metal layers
|
||||
category: drawn
|
||||
source_table: Table 3-2
|
||||
FORBID_AREA:
|
||||
layer:
|
||||
- 290
|
||||
- 16
|
||||
description: Forbidden area for any drawing pattern
|
||||
category: drawn
|
||||
source_table: Table 3-2
|
||||
xsections: {}
|
||||
materials: {}
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