Technolgy file archetecture revised with dictionary input method

mxpic/technologies/silterra/EMO1_2ML_CU.yml

@@ -0,0 +1,422 @@
+schema_version: 1.0.0
+foundry: Silterra
+technology: EMO1_2ML_CU_Al_RDL
+process:
+  name: EMO1
+  revision: c47fe0e44735e170addb3f68fa8b4387
+  optical_material_revision: 77d93f81a36e99288ae982ff91bfedca
+  source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+constants:
+  STD_SMWG_WIDTH: 0.45
+  SLAB_GROWTH: 2
+  W_METAL_MIN: 5
+  SPACING_HEATER_MIN: 2
+  SPACING_METAL_MIN: 4
+  W_HEATER_MIN: 3
+  lib_path: GDS_lib\
+layers:
+  WG_HM:
+    layer:
+    - 275
+    - 0
+    material: si_palik
+    z_start: 0.0
+    thickness: 0.22
+    sidewall_angle: 83.0
+    process: Grow
+    description: Strip Waveguide
+  WG_STRIP:
+    layer:
+    - 101
+    - 251
+    description: Legacy/layout-only strip waveguide layer; not present in the EMO1
+      .lbr stack.
+  WG_LOWRIB:
+    layer:
+    - 100
+    - 90
+    material: si_palik
+    z_start: 0.0
+    thickness: 0.07
+    sidewall_angle: 83.0
+    process: Grow
+    description: Low Rib Waveguide
+  WG_HIGHRIB:
+    layer:
+    - 232
+    - 0
+    material: si_palik
+    z_start: 0.0
+    thickness: 0.15
+    sidewall_angle: 83.0
+    process: Grow
+    description: High Rib Waveguide
+  HEATER:
+    layer:
+    - 29
+    - 30
+    material: tin_palik
+    z_start: 1.22
+    thickness: 0.12
+    sidewall_angle: 90.0
+    process: Grow
+    description: Heater
+  CT_SI:
+    layer:
+    - 268
+    - 0
+    material: tungsten_palik
+    z_start: 0.22
+    thickness: 1.0
+    sidewall_angle: 90.0
+    process: Grow
+    description: Contact Silicon
+  CT_GE:
+    layer:
+    - 35
+    - 0
+    material: tungsten_palik
+    z_start: 0.72
+    thickness: 0.5
+    sidewall_angle: 90.0
+    process: Grow
+    description: Contact Germanium
+  GE_EPI:
+    layer:
+    - 264
+    - 0
+    material: germanium
+    z_start: 0.22
+    thickness: 0.5
+    process: Grow
+    description: Composite Germanium Epitaxy drawing layer from bot/top .lbr rows.
+  UTV:
+    layer:
+    - 172
+    - 0
+    material: copper_palik
+    z_start: 2.05
+    thickness: 1.23
+    sidewall_angle: 90.0
+    process: Grow
+    description: UTV
+  RDL_VIA:
+    layer:
+    - 194
+    - 0
+    material: aluminium_palik
+    z_start: 5.51
+    thickness: 1.33
+    sidewall_angle: 90.0
+    process: Grow
+    description: RDL Via
+  UTM:
+    layer:
+    - 173
+    - 0
+    material: copper_palik
+    z_start: 1.22
+    thickness: 0.83
+    sidewall_angle: 90.0
+    process: Grow
+    description: UTM
+  UTM2:
+    layer:
+    - 197
+    - 0
+    material: copper_palik
+    z_start: 3.28
+    thickness: 2.23
+    sidewall_angle: 90.0
+    process: Grow
+    description: UTM2
+  RDL_MET:
+    layer:
+    - 195
+    - 0
+    material: aluminium_palik
+    z_start: 6.84
+    thickness: 1.2
+    sidewall_angle: 90.0
+    process: Grow
+    description: RDL Aluminium
+  PAD_ELE:
+    layer:
+    - 100
+    - 170
+    material: etch
+    z_start: 8.04
+    thickness: 1.0
+    sidewall_angle: 90.0
+    process: Grow
+    description: Pad Electrical
+  PAD_OPTICAL:
+    layer:
+    - 100
+    - 160
+    material: etch
+    z_start: 7.34
+    thickness: 0.5
+    sidewall_angle: 90.0
+    process: Grow
+    description: Pad Optical
+  PAD_AL:
+    layer:
+    - 145
+    - 0
+    description: Legacy/layout-only aluminium pad layer; not present in the EMO1 .lbr
+      stack.
+  WG_N:
+    layer:
+    - 263
+    - 0
+    material: sin_pecvd
+    z_start: 0.62
+    thickness: 0.4
+    sidewall_angle: 85.0
+    process: Grow
+    description: PECVD/LPCVD Nitride Waveguide
+  SiN_Rib_WG:
+    layer:
+    - 63
+    - 30
+    description: Legacy/layout-only SiN rib waveguide layer; not present in the EMO1
+      .lbr stack.
+  SSIN0:
+    layer:
+    - 283
+    - 0
+    material: be_nitride
+    z_start: 1.22
+    thickness: 0.13
+    sidewall_angle: 90.0
+    process: Grow
+    description: SSIN0
+  SSIN1:
+    layer:
+    - 289
+    - 0
+    material: be_nitride
+    z_start: 2.05
+    thickness: 0.13
+    sidewall_angle: 90.0
+    process: Grow
+    description: SSIN1
+  SSIN2:
+    layer:
+    - 290
+    - 0
+    material: be_nitride
+    z_start: 3.28
+    thickness: 0.13
+    sidewall_angle: 90.0
+    process: Grow
+    description: SSIN2
+  SSIN3:
+    layer:
+    - 291
+    - 0
+    material: be_nitride
+    z_start: 5.51
+    thickness: 0.13
+    sidewall_angle: 90.0
+    process: Grow
+    description: SSIN3
+  EXCLUSION:
+    layer:
+    - 57
+    - 0
+    description: Legacy/layout-only exclusion layer; not present in the EMO1 .lbr
+      stack.
+  SALICIDE:
+    layer:
+    - 128
+    - 60
+    description: Legacy/layout-only salicide layer; not present in the EMO1 .lbr stack.
+  DM_EXL:
+    layer:
+    - 23
+    - 0
+    description: Legacy/layout-only dummy exclusion layer; not present in the EMO1
+      .lbr stack.
+  DM_EXL_FE:
+    layer:
+    - 23
+    - 40
+    description: Legacy/layout-only front-end dummy exclusion layer; not present in
+      the EMO1 .lbr stack.
+  DM_EXL_BE:
+    layer:
+    - 23
+    - 41
+    description: Legacy/layout-only back-end dummy exclusion layer; not present in
+      the EMO1 .lbr stack.
+  OXIDE_FACET:
+    layer:
+    - 90
+    - 0
+    material: etch
+    z_start: -3.0
+    thickness: 11.64
+    sidewall_angle: 98.0
+    process: Grow
+    description: Deep Oxide Trench; GDS is shared with Deep Silicon Trench in the
+      .lbr.
+  DT:
+    layer:
+    - 404
+    - 0
+    description: Legacy/layout-only deep-trench layer; EMO1 .lbr uses 90:0 for deep
+      trench rows.
+  P:
+    layer:
+    - 256
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  N:
+    layer:
+    - 257
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  PP:
+    layer:
+    - 258
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  NP:
+    layer:
+    - 259
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  PPP:
+    layer:
+    - 260
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  NPP:
+    layer:
+    - 261
+    - 0
+    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
+  PD_SIPP:
+    layer:
+    - 100
+    - 140
+    description: Legacy/layout-only photodiode implant layer; not present in the EMO1
+      .lbr stack.
+  PD_SINP:
+    layer:
+    - 100
+    - 150
+    description: Legacy/layout-only photodiode implant layer; not present in the EMO1
+      .lbr stack.
+routing_types:
+- euler_bend
+- standard_bend
+defaults:
+  xsection: strip
+  family: optical
+  width: 0.45
+  radius: 10
+  routing_type: euler_bend
+xsections:
+  strip:
+    family: optical
+    default_width: 0.45
+    default_radius: 10
+    layers:
+    - layer: WG_HM
+      growx: 0
+      growy: 0
+    - layer: WG_STRIP
+      growx: 4
+      growy: 4
+  rib_low:
+    family: optical
+    default_width: 0.45
+    default_radius: 10
+    layers:
+    - layer: WG_HM
+      growx: 0
+      growy: 0
+    - layer: WG_LOWRIB
+      growx: 3
+      growy: 3
+    - layer: WG_STRIP
+      leftedge:
+      - -0.5
+      - -3
+      rightedge:
+      - -0.5
+      - -3.5
+    - layer: WG_STRIP
+      leftedge:
+      - 0.5
+      - 3.5
+      rightedge:
+      - 0.5
+      - 3
+  metal_1:
+    family: electrical
+    default_width: 5
+    default_radius: 10
+    layers:
+    - layer: UTM
+      growx: 0
+      growy: 0
+    - layer: SSIN0
+      growx: 2.5
+      growy: 2.5
+  metal_2:
+    family: electrical
+    default_width: 5
+    default_radius: 10
+    layers:
+    - layer: UTM2
+      growx: 0
+      growy: 0
+    - layer: SSIN1
+      growx: 2.5
+      growy: 2.5
+materials:
+  si_palik:
+    display_name: Layer Builder Si (Silicon) - Palik
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+    data_file: EMO1_2ML_CU_materials/si_palik.csv
+  sin_pecvd:
+    display_name: SilTerra Front End PECVD Nitride
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+    data_file: EMO1_2ML_CU_materials/sin_pecvd.csv
+    notes: WG_N combines PECVD/LPCVD nitride in the source .lbr metadata.
+  germanium:
+    display_name: SilTerra Germanium
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  tungsten_palik:
+    display_name: W (Tungsten) - Palik
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  copper_palik:
+    display_name: Cu (Copper) - Palik
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  aluminium_palik:
+    display_name: Al (Aluminium) - Palik
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  tin_palik:
+    display_name: TiN - Palik
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  be_nitride:
+    display_name: SilTerra Back End Nitride
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: 77d93f81a36e99288ae982ff91bfedca
+  etch:
+    display_name: etch
+    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
+    source_revision: c47fe0e44735e170addb3f68fa8b4387
+
+