schema_version: 1.0.0
foundry: Silterra
technology: EMO1_2ML_CU_Al_RDL
process:
  name: EMO1
  revision: c47fe0e44735e170addb3f68fa8b4387
  optical_material_revision: 77d93f81a36e99288ae982ff91bfedca
  source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
constants:
  STD_SMWG_WIDTH: 0.45
  SLAB_GROWTH: 2
  W_METAL_MIN: 5
  SPACING_HEATER_MIN: 2
  SPACING_METAL_MIN: 4
  W_HEATER_MIN: 3
  lib_path: GDS_lib\
layers:
  WG_HM:
    layer:
    - 275
    - 0
    material: si_palik
    z_start: 0.0
    thickness: 0.22
    sidewall_angle: 83.0
    process: Grow
    description: Strip Waveguide
  WG_STRIP:
    layer:
    - 101
    - 251
    description: Legacy/layout-only strip waveguide layer; not present in the EMO1
      .lbr stack.
  WG_LOWRIB:
    layer:
    - 100
    - 90
    material: si_palik
    z_start: 0.0
    thickness: 0.07
    sidewall_angle: 83.0
    process: Grow
    description: Low Rib Waveguide
  WG_HIGHRIB:
    layer:
    - 232
    - 0
    material: si_palik
    z_start: 0.0
    thickness: 0.15
    sidewall_angle: 83.0
    process: Grow
    description: High Rib Waveguide
  HEATER:
    layer:
    - 29
    - 30
    material: tin_palik
    z_start: 1.22
    thickness: 0.12
    sidewall_angle: 90.0
    process: Grow
    description: Heater
  CT_SI:
    layer:
    - 268
    - 0
    material: tungsten_palik
    z_start: 0.22
    thickness: 1.0
    sidewall_angle: 90.0
    process: Grow
    description: Contact Silicon
  CT_GE:
    layer:
    - 35
    - 0
    material: tungsten_palik
    z_start: 0.72
    thickness: 0.5
    sidewall_angle: 90.0
    process: Grow
    description: Contact Germanium
  GE_EPI:
    layer:
    - 264
    - 0
    material: germanium
    z_start: 0.22
    thickness: 0.5
    process: Grow
    description: Composite Germanium Epitaxy drawing layer from bot/top .lbr rows.
  UTV:
    layer:
    - 172
    - 0
    material: copper_palik
    z_start: 2.05
    thickness: 1.23
    sidewall_angle: 90.0
    process: Grow
    description: UTV
  RDL_VIA:
    layer:
    - 194
    - 0
    material: aluminium_palik
    z_start: 5.51
    thickness: 1.33
    sidewall_angle: 90.0
    process: Grow
    description: RDL Via
  UTM:
    layer:
    - 173
    - 0
    material: copper_palik
    z_start: 1.22
    thickness: 0.83
    sidewall_angle: 90.0
    process: Grow
    description: UTM
  UTM2:
    layer:
    - 197
    - 0
    material: copper_palik
    z_start: 3.28
    thickness: 2.23
    sidewall_angle: 90.0
    process: Grow
    description: UTM2
  RDL_MET:
    layer:
    - 195
    - 0
    material: aluminium_palik
    z_start: 6.84
    thickness: 1.2
    sidewall_angle: 90.0
    process: Grow
    description: RDL Aluminium
  PAD_ELE:
    layer:
    - 100
    - 170
    material: etch
    z_start: 8.04
    thickness: 1.0
    sidewall_angle: 90.0
    process: Grow
    description: Pad Electrical
  PAD_OPTICAL:
    layer:
    - 100
    - 160
    material: etch
    z_start: 7.34
    thickness: 0.5
    sidewall_angle: 90.0
    process: Grow
    description: Pad Optical
  PAD_AL:
    layer:
    - 145
    - 0
    description: Legacy/layout-only aluminium pad layer; not present in the EMO1 .lbr
      stack.
  WG_N:
    layer:
    - 263
    - 0
    material: sin_pecvd
    z_start: 0.62
    thickness: 0.4
    sidewall_angle: 85.0
    process: Grow
    description: PECVD/LPCVD Nitride Waveguide
  SiN_Rib_WG:
    layer:
    - 63
    - 30
    description: Legacy/layout-only SiN rib waveguide layer; not present in the EMO1
      .lbr stack.
  SSIN0:
    layer:
    - 283
    - 0
    material: be_nitride
    z_start: 1.22
    thickness: 0.13
    sidewall_angle: 90.0
    process: Grow
    description: SSIN0
  SSIN1:
    layer:
    - 289
    - 0
    material: be_nitride
    z_start: 2.05
    thickness: 0.13
    sidewall_angle: 90.0
    process: Grow
    description: SSIN1
  SSIN2:
    layer:
    - 290
    - 0
    material: be_nitride
    z_start: 3.28
    thickness: 0.13
    sidewall_angle: 90.0
    process: Grow
    description: SSIN2
  SSIN3:
    layer:
    - 291
    - 0
    material: be_nitride
    z_start: 5.51
    thickness: 0.13
    sidewall_angle: 90.0
    process: Grow
    description: SSIN3
  EXCLUSION:
    layer:
    - 57
    - 0
    description: Legacy/layout-only exclusion layer; not present in the EMO1 .lbr
      stack.
  SALICIDE:
    layer:
    - 128
    - 60
    description: Legacy/layout-only salicide layer; not present in the EMO1 .lbr stack.
  DM_EXL:
    layer:
    - 23
    - 0
    description: Legacy/layout-only dummy exclusion layer; not present in the EMO1
      .lbr stack.
  DM_EXL_FE:
    layer:
    - 23
    - 40
    description: Legacy/layout-only front-end dummy exclusion layer; not present in
      the EMO1 .lbr stack.
  DM_EXL_BE:
    layer:
    - 23
    - 41
    description: Legacy/layout-only back-end dummy exclusion layer; not present in
      the EMO1 .lbr stack.
  OXIDE_FACET:
    layer:
    - 90
    - 0
    material: etch
    z_start: -3.0
    thickness: 11.64
    sidewall_angle: 98.0
    process: Grow
    description: Deep Oxide Trench; GDS is shared with Deep Silicon Trench in the
      .lbr.
  DT:
    layer:
    - 404
    - 0
    description: Legacy/layout-only deep-trench layer; EMO1 .lbr uses 90:0 for deep
      trench rows.
  P:
    layer:
    - 256
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  N:
    layer:
    - 257
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  PP:
    layer:
    - 258
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  NP:
    layer:
    - 259
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  PPP:
    layer:
    - 260
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  NPP:
    layer:
    - 261
    - 0
    description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
  PD_SIPP:
    layer:
    - 100
    - 140
    description: Legacy/layout-only photodiode implant layer; not present in the EMO1
      .lbr stack.
  PD_SINP:
    layer:
    - 100
    - 150
    description: Legacy/layout-only photodiode implant layer; not present in the EMO1
      .lbr stack.
routing_types:
- euler_bend
- standard_bend
defaults:
  xsection: strip
  family: optical
  width: 0.45
  radius: 10
  routing_type: euler_bend
xsections:
  strip:
    family: optical
    default_width: 0.45
    default_radius: 10
    layers:
    - layer: WG_HM
      growx: 0
      growy: 0
    - layer: WG_STRIP
      growx: 4
      growy: 4
  rib_low:
    family: optical
    default_width: 0.45
    default_radius: 10
    layers:
    - layer: WG_HM
      growx: 0
      growy: 0
    - layer: WG_LOWRIB
      growx: 3
      growy: 3
    - layer: WG_STRIP
      leftedge:
      - -0.5
      - -3
      rightedge:
      - -0.5
      - -3.5
    - layer: WG_STRIP
      leftedge:
      - 0.5
      - 3.5
      rightedge:
      - 0.5
      - 3
  metal_1:
    family: electrical
    default_width: 5
    default_radius: 10
    layers:
    - layer: UTM
      growx: 0
      growy: 0
    - layer: SSIN0
      growx: 2.5
      growy: 2.5
  metal_2:
    family: electrical
    default_width: 5
    default_radius: 10
    layers:
    - layer: UTM2
      growx: 0
      growy: 0
    - layer: SSIN1
      growx: 2.5
      growy: 2.5
materials:
  si_palik:
    display_name: Layer Builder Si (Silicon) - Palik
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
    data_file: EMO1_2ML_CU_materials/si_palik.csv
  sin_pecvd:
    display_name: SilTerra Front End PECVD Nitride
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
    data_file: EMO1_2ML_CU_materials/sin_pecvd.csv
    notes: WG_N combines PECVD/LPCVD nitride in the source .lbr metadata.
  germanium:
    display_name: SilTerra Germanium
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  tungsten_palik:
    display_name: W (Tungsten) - Palik
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  copper_palik:
    display_name: Cu (Copper) - Palik
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  aluminium_palik:
    display_name: Al (Aluminium) - Palik
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  tin_palik:
    display_name: TiN - Palik
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  be_nitride:
    display_name: SilTerra Back End Nitride
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: 77d93f81a36e99288ae982ff91bfedca
  etch:
    display_name: etch
    source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
    source_revision: c47fe0e44735e170addb3f68fa8b4387