PotatoMaxwell/mxpic_forge
1
0
Fork 0
Code Issues Pull Requests Actions Packages Projects Releases 1 Wiki Activity
Files
8462c3397f841666a580f29bf2e637151e5dd806
mxpic_forge/mxpic/technologies/silterra/EMO1_2ML_CU.yml
T

423 lines
9.0 KiB
YAML
Raw Blame History

schema_version: 1.0.0
foundry: Silterra
technology: EMO1_2ML_CU_Al_RDL
process:
name: EMO1
revision: c47fe0e44735e170addb3f68fa8b4387
optical_material_revision: 77d93f81a36e99288ae982ff91bfedca
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
constants:
STD_SMWG_WIDTH: 0.45
SLAB_GROWTH: 2
W_METAL_MIN: 5
SPACING_HEATER_MIN: 2
SPACING_METAL_MIN: 4
W_HEATER_MIN: 3
lib_path: GDS_lib\
layers:
WG_HM:
layer:
- 275
- 0
material: si_palik
z_start: 0.0
thickness: 0.22
sidewall_angle: 83.0
process: Grow
description: Strip Waveguide
WG_STRIP:
layer:
- 101
- 251
description: Legacy/layout-only strip waveguide layer; not present in the EMO1
.lbr stack.
WG_LOWRIB:
layer:
- 100
- 90
material: si_palik
z_start: 0.0
thickness: 0.07
sidewall_angle: 83.0
process: Grow
description: Low Rib Waveguide
WG_HIGHRIB:
layer:
- 232
- 0
material: si_palik
z_start: 0.0
thickness: 0.15
sidewall_angle: 83.0
process: Grow
description: High Rib Waveguide
HEATER:
layer:
- 29
- 30
material: tin_palik
z_start: 1.22
thickness: 0.12
sidewall_angle: 90.0
process: Grow
description: Heater
CT_SI:
layer:
- 268
- 0
material: tungsten_palik
z_start: 0.22
thickness: 1.0
sidewall_angle: 90.0
process: Grow
description: Contact Silicon
CT_GE:
layer:
- 35
- 0
material: tungsten_palik
z_start: 0.72
thickness: 0.5
sidewall_angle: 90.0
process: Grow
description: Contact Germanium
GE_EPI:
layer:
- 264
- 0
material: germanium
z_start: 0.22
thickness: 0.5
process: Grow
description: Composite Germanium Epitaxy drawing layer from bot/top .lbr rows.
UTV:
layer:
- 172
- 0
material: copper_palik
z_start: 2.05
thickness: 1.23
sidewall_angle: 90.0
process: Grow
description: UTV
RDL_VIA:
layer:
- 194
- 0
material: aluminium_palik
z_start: 5.51
thickness: 1.33
sidewall_angle: 90.0
process: Grow
description: RDL Via
UTM:
layer:
- 173
- 0
material: copper_palik
z_start: 1.22
thickness: 0.83
sidewall_angle: 90.0
process: Grow
description: UTM
UTM2:
layer:
- 197
- 0
material: copper_palik
z_start: 3.28
thickness: 2.23
sidewall_angle: 90.0
process: Grow
description: UTM2
RDL_MET:
layer:
- 195
- 0
material: aluminium_palik
z_start: 6.84
thickness: 1.2
sidewall_angle: 90.0
process: Grow
description: RDL Aluminium
PAD_ELE:
layer:
- 100
- 170
material: etch
z_start: 8.04
thickness: 1.0
sidewall_angle: 90.0
process: Grow
description: Pad Electrical
PAD_OPTICAL:
layer:
- 100
- 160
material: etch
z_start: 7.34
thickness: 0.5
sidewall_angle: 90.0
process: Grow
description: Pad Optical
PAD_AL:
layer:
- 145
- 0
description: Legacy/layout-only aluminium pad layer; not present in the EMO1 .lbr
stack.
WG_N:
layer:
- 263
- 0
material: sin_pecvd
z_start: 0.62
thickness: 0.4
sidewall_angle: 85.0
process: Grow
description: PECVD/LPCVD Nitride Waveguide
SiN_Rib_WG:
layer:
- 63
- 30
description: Legacy/layout-only SiN rib waveguide layer; not present in the EMO1
.lbr stack.
SSIN0:
layer:
- 283
- 0
material: be_nitride
z_start: 1.22
thickness: 0.13
sidewall_angle: 90.0
process: Grow
description: SSIN0
SSIN1:
layer:
- 289
- 0
material: be_nitride
z_start: 2.05
thickness: 0.13
sidewall_angle: 90.0
process: Grow
description: SSIN1
SSIN2:
layer:
- 290
- 0
material: be_nitride
z_start: 3.28
thickness: 0.13
sidewall_angle: 90.0
process: Grow
description: SSIN2
SSIN3:
layer:
- 291
- 0
material: be_nitride
z_start: 5.51
thickness: 0.13
sidewall_angle: 90.0
process: Grow
description: SSIN3
EXCLUSION:
layer:
- 57
- 0
description: Legacy/layout-only exclusion layer; not present in the EMO1 .lbr
stack.
SALICIDE:
layer:
- 128
- 60
description: Legacy/layout-only salicide layer; not present in the EMO1 .lbr stack.
DM_EXL:
layer:
- 23
- 0
description: Legacy/layout-only dummy exclusion layer; not present in the EMO1
.lbr stack.
DM_EXL_FE:
layer:
- 23
- 40
description: Legacy/layout-only front-end dummy exclusion layer; not present in
the EMO1 .lbr stack.
DM_EXL_BE:
layer:
- 23
- 41
description: Legacy/layout-only back-end dummy exclusion layer; not present in
the EMO1 .lbr stack.
OXIDE_FACET:
layer:
- 90
- 0
material: etch
z_start: -3.0
thickness: 11.64
sidewall_angle: 98.0
process: Grow
description: Deep Oxide Trench; GDS is shared with Deep Silicon Trench in the
.lbr.
DT:
layer:
- 404
- 0
description: Legacy/layout-only deep-trench layer; EMO1 .lbr uses 90:0 for deep
trench rows.
P:
layer:
- 256
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
N:
layer:
- 257
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
PP:
layer:
- 258
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
NP:
layer:
- 259
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
PPP:
layer:
- 260
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
NPP:
layer:
- 261
- 0
description: Legacy/layout-only implant layer; not present in the EMO1 .lbr stack.
PD_SIPP:
layer:
- 100
- 140
description: Legacy/layout-only photodiode implant layer; not present in the EMO1
.lbr stack.
PD_SINP:
layer:
- 100
- 150
description: Legacy/layout-only photodiode implant layer; not present in the EMO1
.lbr stack.
routing_types:
- euler_bend
- standard_bend
defaults:
xsection: strip
family: optical
width: 0.45
radius: 10
routing_type: euler_bend
xsections:
strip:
family: optical
default_width: 0.45
default_radius: 10
layers:
- layer: WG_HM
growx: 0
growy: 0
- layer: WG_STRIP
growx: 4
growy: 4
rib_low:
family: optical
default_width: 0.45
default_radius: 10
layers:
- layer: WG_HM
growx: 0
growy: 0
- layer: WG_LOWRIB
growx: 3
growy: 3
- layer: WG_STRIP
leftedge:
- -0.5
- -3
rightedge:
- -0.5
- -3.5
- layer: WG_STRIP
leftedge:
- 0.5
- 3.5
rightedge:
- 0.5
- 3
metal_1:
family: electrical
default_width: 5
default_radius: 10
layers:
- layer: UTM
growx: 0
growy: 0
- layer: SSIN0
growx: 2.5
growy: 2.5
metal_2:
family: electrical
default_width: 5
default_radius: 10
layers:
- layer: UTM2
growx: 0
growy: 0
- layer: SSIN1
growx: 2.5
growy: 2.5
materials:
si_palik:
display_name: Layer Builder Si (Silicon) - Palik
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
data_file: EMO1_2ML_CU_materials/si_palik.csv
sin_pecvd:
display_name: SilTerra Front End PECVD Nitride
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
data_file: EMO1_2ML_CU_materials/sin_pecvd.csv
notes: WG_N combines PECVD/LPCVD nitride in the source .lbr metadata.
germanium:
display_name: SilTerra Germanium
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
tungsten_palik:
display_name: W (Tungsten) - Palik
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
copper_palik:
display_name: Cu (Copper) - Palik
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
aluminium_palik:
display_name: Al (Aluminium) - Palik
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
tin_palik:
display_name: TiN - Palik
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
be_nitride:
display_name: SilTerra Back End Nitride
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: 77d93f81a36e99288ae982ff91bfedca
etch:
display_name: etch
source_file: EMO1 process file 2ML Cu + Al RDL Rev1 2023R2.lbr
source_revision: c47fe0e44735e170addb3f68fa8b4387
Reference in New Issue View Git Blame Copy Permalink